- Product Model IMZ120R030M1HXKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SICFET N-CH 1.2KV 56A TO247-4
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1509
- 1 20.44
- 30 16.55
- 120 15.57
- 510 14.11
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 56A (Tc)
- Rds On (Max) @ Id, Vgs 40mOhm @ 25A, 18V
- Power Dissipation (Max) 227W (Tc)
- Vgs(th) (Max) @ Id 5.7V @ 10mA
- Supplier Device Package PG-TO247-4-1
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +23V, -7V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 2120 pF @ 800 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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