• In Stock 1761
Pricing:
  • 1 11.58
  • 30 9.37
  • 120 8.82
  • 510 7.99
  • 1020 7.33

Technical Details

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 36A (Tc)
  • Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 18V
  • Power Dissipation (Max) 150W (Tc)
  • Vgs(th) (Max) @ Id 5.7V @ 5.6mA
  • Supplier Device Package PG-TO247-4-1
  • Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
  • Vgs (Max) +23V, -7V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 31 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 800 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) Not Applicable
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

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