• In Stock 3232
Pricing:
  • 1 17.42

Technical Details

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 71A (Tc)
  • Rds On (Max) @ Id, Vgs 48mOhm @ 35A, 15V
  • Power Dissipation (Max) 333W (Tc)
  • Vgs(th) (Max) @ Id 2.69V @ 10mA
  • Supplier Device Package TO-247-3
  • Drive Voltage (Max Rds On, Min Rds On) 15V
  • Vgs (Max) ±15V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 106 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds 2929 pF @ 800 V
  • California Prop 65 California Prop 65 Information
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


1200V SILICON CARBIDE MOSFET

In Stock: 1740

  • 1: 16.57
  • 10: 15.22
  • 25: 14.59
  • 240: 12.23
  • 480: 11.44

1200V 12M TO-247-4 G3R SIC MOSFE

In Stock: 1904

  • 1: 62.01

SIC MOSFET N-CH 128A TO247-4

In Stock: 2585

  • 1: 36.09

SIC MOSFET N-CH 90A TO247-4

In Stock: 3103

  • 1: 22.53

SIC MOSFET N-CH 11A TO247-3

In Stock: 10023

  • 1: 4.74

SIC MOSFET N-CH 71A TO247-4

In Stock: 1500

  • 1: 17.67

SICFET N-CH 1.2KV 36A TO247-3

In Stock: 1736

  • 1: 11.97
  • 30: 9.56
  • 120: 8.55
  • 510: 7.54
  • 1020: 6.79

SICFET N-CH 1200V 60A TO247-3

In Stock: 2238

  • 1: 32.54
  • 30: 32

DIODE SIL CARB 1.2KV 94A TO247AC

In Stock: 2379

  • 1: 10.15
  • 10: 8.7
  • 300: 6.83
  • 600: 6.4
  • 1200: 5.76
Top