- Product Model TP65H300G4LSG-TR
- Brand Transphorm
- RoHS No
- Description GANFET N-CH 650V 6.5A 3PQFN
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 8007
- 3000 1.75
Technical Details
- Package / Case 3-PowerDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
- Rds On (Max) @ Id, Vgs 312mOhm @ 5A, 8V
- Power Dissipation (Max) 21W (Tc)
- Vgs(th) (Max) @ Id 2.6V @ 500µA
- Supplier Device Package 3-PQFN (8x8)
- Drive Voltage (Max Rds On, Min Rds On) 8V
- Vgs (Max) ±18V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 9.6 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
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