- Product Model TP65H150G4LSG
- Brand Transphorm
- RoHS No
- Description GAN FET N-CH 650V PQFN
- Categories Single FETs, MOSFETs
- In Stock 4334
- 3000 2.35
Technical Details
- Package / Case 3-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 13A (Tc)
- Rds On (Max) @ Id, Vgs 180mOhm @ 8.5A, 10V
- Power Dissipation (Max) 52W (Tc)
- Vgs(th) (Max) @ Id 4.8V @ 500µA
- Supplier Device Package 3-PQFN (8x8)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 598 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
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