- Product Model IMW65R048M1HXKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET 650V NCH SIC TRENCH
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 2935
- 1 7.75
- 30 6.5
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 39A (Tc)
- Rds On (Max) @ Id, Vgs 64mOhm @ 20.1A, 18V
- Power Dissipation (Max) 125W (Tc)
- Vgs(th) (Max) @ Id 5.7V @ 6mA
- Supplier Device Package PG-TO247-3-41
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +23V, -5V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 33 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 1118 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
SICFET N-CH 650V 37A TO247-3
In Stock: 2243
- 1: 11.64
- 30: 9.76
GANFET N-CH 650V 34.5A TO247-3
In Stock: 2070
- 1: 20.41
- 30: 16.92
- 120: 15.87
- 510: 13.54
MOSFET 650V NCH SIC TRENCH
In Stock: 1851
- 1: 20.5
- 30: 16.6
- 120: 15.62
- 510: 14.16
SILICON CARBIDE MOSFET, PG-TO247
In Stock: 1588
- 1: 10.96
- 30: 8.75
- 120: 7.83
- 510: 6.91
- 1020: 6.22
MOSFET 650V NCH SIC TRENCH
In Stock: 1555
- 1: 10.74
- 30: 8.58
- 120: 7.67
- 510: 6.77
- 1020: 6.09
MOSFET 650V NCH SIC TRENCH
In Stock: 2065
- 1: 12.67
- 30: 10.26
- 120: 9.66
- 510: 8.75
- 1020: 8.03
AUTOMOTIVE_COOLMOS PG-TO263-3
In Stock: 2469
- 1000: 2.69
- 2000: 2.53
SILICON CARBIDE MOSFET, NCHANNEL
In Stock: 1953
- 1: 12.02
- 30: 9.73
- 120: 9.16
- 510: 8.3
- 1020: 7.61
SIC MOS TO247-3L 650V
In Stock: 2015
- 1: 10.53
- 30: 8.41
- 120: 7.52
- 510: 6.64
- 1020: 5.97
