- Product Model IMW65R027M1HXKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET 650V NCH SIC TRENCH
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1851
- 1 20.5
- 30 16.6
- 120 15.62
- 510 14.16
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 47A (Tc)
- Rds On (Max) @ Id, Vgs 34mOhm @ 38.3A, 18V
- Power Dissipation (Max) 189W (Tc)
- Vgs(th) (Max) @ Id 5.7V @ 11mA
- Supplier Device Package PG-TO247-3-41
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +23V, -5V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 62 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 2131 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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