库存:77989

技术细节

  • 包装/箱 TO-220-3
  • 安装类型 Through Hole
  • 工作温度 -55°C ~ 175°C (TJ)
  • 技术 MOSFET (Metal Oxide)
  • 场效应管类型 P-Channel
  • 电流 - 连续漏极 (Id) @ 25°C 19A (Tc)
  • Rds On(最大)@Id、Vgs 100mOhm @ 10A, 10V
  • 功耗(最大) 68W (Tc)
  • Vgs(th)(最大值)@Id 4V @ 250µA
  • 供应商设备包 TO-220AB
  • 驱动电压(最大导通电阻、最小导通电阻) 10V
  • Vgs(最大) ±20V
  • 漏源电压 (Vdss) 55 V
  • 栅极电荷 (Qg)(最大值)@Vgs 35 nC @ 10 V
  • 输入电容 (Ciss)(最大值)@Vds 620 pF @ 25 V

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