- Product Model SIHD180N60E-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 600V 19A TO252AA
- Classification Single FETs, MOSFETs
-
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Inventory:4394
Pricing:
- 1 2.76
- 10 2.32
- 100 1.87
- 500 1.67
- 1000 1.43
- 3000 1.34
- 6000 1.29
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 19A (Tc)
- Rds On (Max) @ Id, Vgs 195mOhm @ 9.5A, 10V
- Power Dissipation (Max) 156W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package DPAK
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 100 V