- Product Model SIHD186N60EF-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 600V 19A DPAK
- Classification Single FETs, MOSFETs
-
PDF
- 1 2.97
- 50 2.35
- 100 2.02
- 500 1.79
- 1000 1.53
- 2000 1.44
- 5000 1.39
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 19A (Tc)
- Rds On (Max) @ Id, Vgs 201mOhm @ 9.5A, 10V
- Power Dissipation (Max) 156W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-252AA
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1118 pF @ 100 V
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