- Product Model IPN60R2K0PFD7SATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 600V 3A SOT223
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.23
- 6000 0.22
- 9000 0.2
- 30000 0.2
Technical Details
- Package / Case TO-261-3
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 3A (Tc)
- Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V
- Power Dissipation (Max) 6W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 30µA
- Supplier Device Package PG-SOT223-3-1
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 134 pF @ 400 V
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