- Product Model IRFD220PBF
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 200V 800MA 4DIP
- Classification Single FETs, MOSFETs
-
PDF
- 1 1.43
- 10 1.17
- 100 0.91
- 2500 0.59
- 5000 0.56
- 10000 0.54
Technical Details
- Package / Case 4-DIP (0.300", 7.62mm)
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 800mA (Ta)
- Rds On (Max) @ Id, Vgs 800mOhm @ 480mA, 10V
- Power Dissipation (Max) 1W (Ta)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package 4-HVMDIP
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 260 pF @ 25 V
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