Technical Details

• Package / Case TO-247-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 200°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 65A (Tc)
• Rds On (Max) @ Id, Vgs 69mOhm @ 40A, 20V
• Power Dissipation (Max) 318W (Tc)
• Vgs(th) (Max) @ Id 3V @ 1mA
• Supplier Device Package HiP247™
• Drive Voltage (Max Rds On, Min Rds On) 20V
• Vgs (Max) +25V, -10V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 122 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 400 V