- Product Model SIR690DP-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 200V 34.4A PPAK SO-8
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 9168
- 3000 0.72
- 6000 0.69
- 9000 0.67
Technical Details
- Package / Case PowerPAK® SO-8
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 34.4A (Tc)
- Rds On (Max) @ Id, Vgs 35mOhm @ 20A, 10V
- Power Dissipation (Max) 104W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package PowerPAK® SO-8
- Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 37 nC @ 7.5 V
- Input Capacitance (Ciss) (Max) @ Vds 1935 pF @ 100 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant
Related Products
MOSFET N-CH 200V 52A TSON-8
In Stock: 13111
- 5000: 2.29
MOSFET N-CH 200V 36A TDSON-8
In Stock: 18823
- 5000: 1.51
MOSFET N-CH 200V 35A TDSON-8-1
In Stock: 7835
- 5000: 1.52
MOSFET N-CH 100V 19.7A 8SO
In Stock: 1500
- 2500: 0.59
- 5000: 0.56
- 12500: 0.54
MOSFET N-CH 200V 35.4A PPAK SO-8
In Stock: 6804
- 3000: 0.82
- 6000: 0.79
- 9000: 0.76
MOSFET N-CH 200V 18.6A PPAK SO-8
In Stock: 1500
- 3000: 0.48
- 6000: 0.46
- 9000: 0.43
MOSFET N-CH 200V 22.5A PPAK SO-8
In Stock: 7283
- 3000: 0.58
- 6000: 0.56
- 9000: 0.53
AUTOMOTIVE N-CHANNEL 60 V (D-S)
In Stock: 7892
- 3000: 0.34
- 6000: 0.33
- 9000: 0.3
- 30000: 0.3
MOSFET N-CH 200V 90A TO263
In Stock: 1577
- 800: 1.9
- 1600: 1.63
- 2400: 1.53
- 5600: 1.47
