- Product Model SIR624DP-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 200V 18.6A PPAK SO-8
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1500
- 3000 0.48
- 6000 0.46
- 9000 0.43
Technical Details
- Package / Case PowerPAK® SO-8
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 18.6A (Tc)
- Rds On (Max) @ Id, Vgs 60mOhm @ 10A, 10V
- Power Dissipation (Max) 52W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package PowerPAK® SO-8
- Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 23 nC @ 7.5 V
- Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 100 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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