- Product Model SUM90100E-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description N-CHANNEL 200-V (D-S) MOSFET D2P
- Classification Single FETs, MOSFETs
-
PDF
- 1 3.86
- 10 3.24
- 100 2.62
- 800 2.33
- 1600 2
- 2400 1.88
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 150A (Tc)
- Rds On (Max) @ Id, Vgs 11.4mOhm @ 16A, 10V
- Power Dissipation (Max) 375W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-263 (D2PAK)
- Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3930 pF @ 100 V
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