- Product Model IPB60R180C7ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 600V 13A TO263-3
- Classification Single FETs, MOSFETs
-
PDF
- 1000 1.44
- 2000 1.35
- 5000 1.3
Technical Details
- Package / Case TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 13A (Tc)
- Rds On (Max) @ Id, Vgs 130mOhm @ 5.3A, 10V
- Power Dissipation (Max) 68W (Tc)
- Vgs(th) (Max) @ Id 4V @ 260µA
- Supplier Device Package PG-TO263-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 400 V
Related Products
MOSFET N-CH 600V 50A TO263-3
Inventory: 1232
MOSFET N-CH 600V 19A TO263-3
Inventory: 0
MOSFET N-CH 600V 18A D2PAK
Inventory: 2766
HIGH POWER_NEW
Inventory: 2850
HIGH POWER_NEW
Inventory: 0
LOW POWER_NEW
Inventory: 2000
MOSFET N-CH 600V 18A TO252-3
Inventory: 35667
MOSFET N-CH 600V 52A HDSOP-10
Inventory: 0
MOSFET N-CH 600V 40A HDSOP-10
Inventory: 0
MOSFET N-CH 600V 19A HDSOP-10
Inventory: 37
