- Product Model IPB95R310PFD7ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description LOW POWER_NEW
- Classification Single FETs, MOSFETs
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Inventory:3500
Pricing:
- 1000 1.91
- 2000 1.8
- 5000 1.73
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
- Rds On (Max) @ Id, Vgs 310mOhm @ 10.4A, 10V
- Power Dissipation (Max) 125W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 520µA
- Supplier Device Package PG-TO263-3-2
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 950 V
- Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1765 pF @ 400 V