Inventory:9847
Pricing:
  • 1 7.5
  • 30 5.99
  • 120 5.36
  • 510 4.73
  • 1020 4.25
  • 2010 3.99

Technical Details

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
  • Rds On (Max) @ Id, Vgs 360mOhm @ 7.5A, 15V
  • Power Dissipation (Max) 54W (Tc)
  • Vgs(th) (Max) @ Id 3.5V @ 1.2mA
  • Supplier Device Package TO-247-3
  • Drive Voltage (Max Rds On, Min Rds On) 15V
  • Vgs (Max) +18V, -8V
  • Drain to Source Voltage (Vdss) 900 V
  • Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 600 V

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