Inventory:8322
Pricing:
  • 1 12.26
  • 30 9.92
  • 120 9.34
  • 510 8.46
  • 1020 7.76

Technical Details

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 23A (Tc)
  • Rds On (Max) @ Id, Vgs 155mOhm @ 15A, 15V
  • Power Dissipation (Max) 97W (Tc)
  • Vgs(th) (Max) @ Id 3.5V @ 3mA
  • Supplier Device Package TO-247-3
  • Drive Voltage (Max Rds On, Min Rds On) 15V
  • Vgs (Max) +18V, -8V
  • Drain to Source Voltage (Vdss) 900 V
  • Gate Charge (Qg) (Max) @ Vgs 17.3 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds 414 pF @ 600 V

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