- Product Model EPC2019
- Brand EPC
- RoHS Yes
- Description GANFET N-CH 200V 8.5A DIE
- Classification Single FETs, MOSFETs
-
PDF
- 1000 2.01
- 2000 1.89
- 5000 1.81
Technical Details
- Package / Case Die
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 8.5A (Ta)
- Rds On (Max) @ Id, Vgs 42mOhm @ 7A, 5V
- Vgs(th) (Max) @ Id 2.5V @ 1.5mA
- Supplier Device Package Die
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Vgs (Max) +6V, -4V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 2.9 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 288 pF @ 100 V
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