- Product Model TK46E08N1,S1X
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 80V 80A TO220
- Classification Single FETs, MOSFETs
-
PDF
- 1 1.16
- 50 0.93
- 100 0.74
- 500 0.62
- 1000 0.51
- 2000 0.48
- 5000 0.46
- 10000 0.45
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Rds On (Max) @ Id, Vgs 8.4mOhm @ 23A, 10V
- Power Dissipation (Max) 103W (Tc)
- Vgs(th) (Max) @ Id 4V @ 500µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 80 V
- Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 40 V
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