- Product Model FDP8D5N10C
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET N-CH 100V 76A TO220-3
- Classification Single FETs, MOSFETs
-
PDF
- 1 2.76
- 50 2.18
- 100 1.87
- 500 1.66
- 1000 1.43
- 2000 1.34
- 5000 1.29
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 76A (Tc)
- Rds On (Max) @ Id, Vgs 8.5mOhm @ 76A, 10V
- Power Dissipation (Max) 2.4W (Ta), 107W (Tc)
- Vgs(th) (Max) @ Id 4V @ 130µA
- Supplier Device Package TO-220-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2475 pF @ 50 V
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