Technical Details

• Package / Case Die
• Mounting Type Surface Mount
• Operating Temperature -40°C ~ 125°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 3A (Ta)
• Rds On (Max) @ Id, Vgs 100mOhm @ 3A, 5V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Supplier Device Package Die
• Drive Voltage (Max Rds On, Min Rds On) 5V
• Vgs (Max) +6V, -5V
• Drain to Source Voltage (Vdss) 200 V
• Gate Charge (Qg) (Max) @ Vgs 1.8 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 145 pF @ 100 V