- Product Model G1K3N10LL
- Brand Goford Semiconductor
- RoHS Yes
- Description MOSFET N-CH 100V 3.4A SOT-23-6L
- Classification Single FETs, MOSFETs
-
PDF
Inventory:10500
Technical Details
- Package / Case SOT-23-6
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 3.4A (Tc)
- Rds On (Max) @ Id, Vgs 130mOhm @ 1A, 10V
- Power Dissipation (Max) 2.28W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package SOT-23-6
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 808 pF @ 50 V