- Product Model IXTA6N100D2
- Brand Littelfuse / IXYS RF
- RoHS Yes
- Description MOSFET N-CH 1000V 6A TO263
- Classification Single FETs, MOSFETs
-
PDF
- 1 9.36
- 50 7.47
- 100 6.69
- 500 5.9
- 1000 5.31
- 2000 4.98
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 6A (Tc)
- Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V
- FET Feature Depletion Mode
- Power Dissipation (Max) 300W (Tc)
- Supplier Device Package TO-263AA
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 1000 V
- Gate Charge (Qg) (Max) @ Vgs 95 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V
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