Technical Details

• Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 6A (Tj)
• Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V
• FET Feature Depletion Mode
• Power Dissipation (Max) 300W (Tc)
• Vgs(th) (Max) @ Id 4.5V @ 250µA
• Supplier Device Package TO-263HV
• Drive Voltage (Max Rds On, Min Rds On) 0V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 1000 V
• Gate Charge (Qg) (Max) @ Vgs 95 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 10 V