- Product Model G080P06M
- Brand Goford Semiconductor
- RoHS Yes
- Description MOSFET P-CH 60V 195A TO-263
- Classification Single FETs, MOSFETs
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Inventory:10500
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 195A (Tc)
- Rds On (Max) @ Id, Vgs 7.5mOhm @ 20A, 10V
- Power Dissipation (Max) 294W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-263
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 15870 pF @ 30 V