- Product Model GT065P06D5
- Brand Goford Semiconductor
- RoHS Yes
- Description MOSFET P-CH 60V 103A DFN5*6-8L
- Classification Single FETs, MOSFETs
-
PDF
- 5000 0.65
- 10000 0.63
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 103A (Tc)
- Rds On (Max) @ Id, Vgs 7mOhm @ 20A, 10V
- Power Dissipation (Max) 178W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package 8-DFN (4.9x5.75)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5326 pF @ 30 V
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