- Product Model GPI65008DF68
- Brand GaNPower
- RoHS Yes
- Description GaNFET N-CH 650V 8A DFN6x8
- Classification Single FETs, MOSFETs
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Technical Details
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 8A
- Vgs(th) (Max) @ Id 1.7V @ 3.5mA
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Vgs (Max) +7.5V, -12V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 2.1 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds 63 pF @ 400 V
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