Technical Details

• Package / Case Die
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 10A
• Vgs(th) (Max) @ Id 1.4V @ 3.5mA
• Supplier Device Package Die
• Drive Voltage (Max Rds On, Min Rds On) 6V
• Vgs (Max) +7.5V, -12V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 2.6 nC @ 6 V
• Input Capacitance (Ciss) (Max) @ Vds 90 pF @ 400 V