- Product Model TP44100SG
- Brand Tagore Technology
- RoHS No
- Description GAN FET HEMT 650V .118OHM 22QFN
- Classification Single FETs, MOSFETs
-
PDF
- 3000 3.3
Technical Details
- Package / Case 22-PowerVFQFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 19A (Tc)
- Rds On (Max) @ Id, Vgs 118mOhm @ 500mA, 6V
- Vgs(th) (Max) @ Id 2.5V @ 11mA
- Supplier Device Package 22-QFN (5x7)
- Drive Voltage (Max Rds On, Min Rds On) 0V, 6V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 3 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 400 V
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