Inventory:4483
Pricing:
  • 3000 1.85

Technical Details

  • Package / Case 22-PowerVFQFN
  • Mounting Type Surface Mount
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology GaNFET (Gallium Nitride)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 10A (Tc)
  • Rds On (Max) @ Id, Vgs 236mOhm @ 500mA, 6V
  • Vgs(th) (Max) @ Id 2.5V @ 5.5mA
  • Supplier Device Package 22-QFN (5x7)
  • Drive Voltage (Max Rds On, Min Rds On) 0V, 6V
  • Vgs (Max) ±20V
  • Drain to Source Voltage (Vdss) 650 V
  • Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 6 V
  • Input Capacitance (Ciss) (Max) @ Vds 55 pF @ 400 V

Related Products


DIODE SIL CARBIDE 650V 11A DPAK

Inventory: 56

650V GAN HEMT, 200MOHM, DFN5X6.

Inventory: 4355

MOSFET N-CH 100V 100A TO220-3

Inventory: 142

MOSFET N-CH 100V 100A TO220-3

Inventory: 352

TRENCH SCHOTTKY RECTIFIER 250V 4

Inventory: 7648

GAN FET HEMT 650V .118OHM 22QFN

Inventory: 2969

Top