- Product Model GT025N06AM
- Brand Goford Semiconductor
- RoHS Yes
- Description N60V,170A,RD<2.5M@10V,VTH1.2V~2.
- Classification Single FETs, MOSFETs
-
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Inventory:2288
Pricing:
- 800 0.95
- 1600 0.81
- 2400 0.77
- 5600 0.74
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 170A (Tc)
- Rds On (Max) @ Id, Vgs 2.5mOhm @ 20A, 10V
- Power Dissipation (Max) 215W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package TO-263
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5119 pF @ 30 V
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