- Product Model G1K1P06HH
- Brand Goford Semiconductor
- RoHS Yes
- Description P-60V,-4.5A,RD(MAX)<110M@-10V,VT
- Classification Single FETs, MOSFETs
-
PDF
- 2500 0.09
- 5000 0.09
- 12500 0.08
- 25000 0.08
- 62500 0.08
- 125000 0.08
Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
- Rds On (Max) @ Id, Vgs 110mOhm @ 4A, 10V
- Power Dissipation (Max) 3.1W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package SOT-223
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 981 pF @ 30 V
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