Inventory:1549
Pricing:
  • 1 392.75
  • 10 377.99

Technical Details

  • Package / Case 4-SMD, No Lead
  • Mounting Type Surface Mount
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology GaNFET (Gallium Nitride)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 5A (Tc)
  • Rds On (Max) @ Id, Vgs 45mOhm @ 5A, 5V
  • Vgs(th) (Max) @ Id 2.5V @ 1.2mA
  • Supplier Device Package 4-SMD
  • Drive Voltage (Max Rds On, Min Rds On) 5V
  • Vgs (Max) +6V, -4V
  • Drain to Source Voltage (Vdss) 100 V
  • Gate Charge (Qg) (Max) @ Vgs 2.2 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds 233 pF @ 50 V

Related Products


GAN FET HEMT100V30A COTS 4FSMD-B

Inventory: 73

GAN FET HEMT 60V 1A COTS 4UB

Inventory: 82

GAN FET HEMT 40V 8A 4FSMD-A

Inventory: 166

GAN FET HEMT 40V 8A 4FSMD-A

Inventory: 0

GAN FET HEMT 40V30A COTS 4FSMD-B

Inventory: 141

GAN FET HEMT 200V 18A 4FSMD-B

Inventory: 51

GAN FET HEMT 300V4A COTS 4FSMD-C

Inventory: 0

650 V, 80 MOHM GALLIUM NITRIDE (

Inventory: 1985

650 V, 190 MOHM GALLIUM NITRIDE

Inventory: 1971

Top