- Product Model G2002A
- Brand Goford Semiconductor
- RoHS Yes
- Description N200V, 2A,RD<540M@10V,VTH1.0V~3.
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.1
- 6000 0.1
- 9000 0.09
- 30000 0.08
- 75000 0.08
Technical Details
- Package / Case SOT-23-6
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 2A (Tc)
- Rds On (Max) @ Id, Vgs 540mOhm @ 1A, 10V
- Power Dissipation (Max) 2.5W (Tc)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package SOT-23-6L
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 733 pF @ 100 V
Related Products
MOSFET N-CH 100V 170MA SOT23-3
Inventory: 105581
MOSFET P-CH 20V 700MA 3DFN
Inventory: 164254
N200V, 2A,RD<540M@10V,VTH1.0V~3.
Inventory: 956
MOSFET N-CH 200V 2A SOT-23-6L
Inventory: 117000
N190V, 3A,RD<540M@10V,VTH1.0V~3.
Inventory: 1757
MOSFET N-CH 190V 3A SOT-23-3L
Inventory: 57000
N200V, ESD,2A,RD<0.7@10V,VTH1V~2
Inventory: 702
MOSFET N-CH ESD 200V 2A SOT-223
Inventory: 10000
N-PH,200V, ESD,2A,RD<0.7@10V,VTH
Inventory: 2778
MOSFET N-CH ESD 200V 2A SOT-23-6
Inventory: 24000
