Technical Details

• Package / Case 4-PowerTSFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 55A (Tc)
• Rds On (Max) @ Id, Vgs 50mOhm @ 25A, 18V
• Power Dissipation (Max) 187W (Tc)
• Vgs(th) (Max) @ Id 4.3V @ 8mA
• Supplier Device Package 4-TDFN (8x8)
• Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
• Vgs (Max) +22V, -8V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 105 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 1870 pF @ 325 V