- Product Model NTH4L020N090SC1
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description SILICON CARBIDE MOSFET, NCHANNEL
- Classification Single FETs, MOSFETs
-
PDF
Inventory:1950
Pricing:
- 1 27.28
- 30 22.61
- 120 21.2
- 510 18.09
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 116A (Tc)
- Rds On (Max) @ Id, Vgs 28mOhm @ 60A, 15V
- Power Dissipation (Max) 484W (Tc)
- Vgs(th) (Max) @ Id 4.3V @ 20mA
- Supplier Device Package TO-247-4L
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +22V, -8V
- Drain to Source Voltage (Vdss) 900 V
- Gate Charge (Qg) (Max) @ Vgs 196 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 4415 pF @ 450 V
Related Products
SICFET N-CH 1200V 100A TO247-4L
Inventory: 1363
SIC DISCRETE
Inventory: 0
SILICON CARBIDE MOSFET, NCHANNEL
Inventory: 133
SICFET N-CH 1200V 102A TO247
Inventory: 313
SILICON CARBIDE (SIC) MOSFET - 1
Inventory: 269
SIC MOS TO247-4L 22MOHM 1200V
Inventory: 876
