Technical Details

• Package / Case TO-247-3
• Mounting Type Through Hole
• Operating Temperature 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 81A (Tj)
• Rds On (Max) @ Id, Vgs 23.4mOhm @ 42A, 18V
• Power Dissipation (Max) 312W
• Vgs(th) (Max) @ Id 4.8V @ 22.2mA
• Supplier Device Package TO-247N
• Drive Voltage (Max Rds On, Min Rds On) 18V
• Vgs (Max) +21V, -4V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 170 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 4532 pF @ 800 V