- Product Model SCT4013DEC11
- Brand ROHM Semiconductor
- RoHS Yes
- Description 750V, 105A, 3-PIN THD, TRENCH-ST
- Classification Single FETs, MOSFETs
- 1 36.33
- 30 30.11
- 120 28.23
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 105A (Tj)
- Rds On (Max) @ Id, Vgs 16.9mOhm @ 58A, 18V
- Power Dissipation (Max) 312W
- Vgs(th) (Max) @ Id 4.8V @ 30.8mA
- Supplier Device Package TO-247N
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +21V, -4V
- Drain to Source Voltage (Vdss) 750 V
- Gate Charge (Qg) (Max) @ Vgs 170 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 4580 pF @ 500 V
Related Products
SIC DISCRETE
Inventory: 228
SILICON CARBIDE (SIC) MOSFET - 1
Inventory: 342
650V, 118A, THD, TRENCH-STRUCTUR
Inventory: 441
750V, 13M, 4-PIN THD, TRENCH-STR
Inventory: 0
750V, 98A, 7-PIN SMD, TRENCH-STR
Inventory: 387
1200V, 75A, 7-PIN SMD, TRENCH-ST
Inventory: 925
750V, 26M, 3-PIN THD, TRENCH-STR
Inventory: 4919
750V, 45M, 3-PIN THD, TRENCH-STR
Inventory: 4206
1200V, 26A, 4-PIN THD, TRENCH-ST
Inventory: 313
750V/9MOHM, SIC, STACKED CASCODE
Inventory: 558
