- Product Model G65P06F
- Brand Goford Semiconductor
- RoHS Yes
- Description P-CH, -60V, 65A, RD(MAX)<18M@-10
- Classification Single FETs, MOSFETs
-
PDF
- 1 1.15
- 50 0.92
- 100 0.73
- 500 0.62
- 1000 0.5
- 2000 0.47
- 5000 0.45
- 10000 0.43
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 65A (Tc)
- Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V
- Power Dissipation (Max) 39W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 250µA
- Supplier Device Package TO-220F
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 6477 pF @ 25 V
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