- Product Model G70N04T
- Brand Goford Semiconductor
- RoHS Yes
- Description N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
- Classification Single FETs, MOSFETs
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Inventory:1521
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 70A (Tc)
- Rds On (Max) @ Id, Vgs 7mOhm @ 30A, 10V
- Power Dissipation (Max) 104W (Tc)
- Vgs(th) (Max) @ Id 2.4V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4010 pF @ 20 V
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