- Product Model GC11N65K
- Brand Goford Semiconductor
- RoHS Yes
- Description N650V,RD(MAX)<360M@10V,VTH2.5V~4
- Classification Single FETs, MOSFETs
-
PDF
- 2500 0.74
- 5000 0.71
- 12500 0.69
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V
- Power Dissipation (Max) 179W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-252
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 901 pF @ 50 V
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