- Product Model SCT4018KRC15
- Brand ROHM Semiconductor
- RoHS Yes
- Description 1200V, 18M, 4-PIN THD, TRENCH-ST
- Classification Single FETs, MOSFETs
- 1 41.12
- 30 34.46
- 120 32.16
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 81A (Tc)
- Rds On (Max) @ Id, Vgs 23.4mOhm @ 42A, 18V
- Power Dissipation (Max) 312W
- Vgs(th) (Max) @ Id 4.8V @ 22.2mA
- Supplier Device Package TO-247-4L
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +21V, -4V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 170 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 4532 pF @ 800 V
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