- Product Model FBG10N05AC
- Brand EPC Space
- RoHS No
- Description GAN FET HEMT 100V5A COTS 4FSMD-A
- Classification Single FETs, MOSFETs
-
PDF
Technical Details
- Package / Case 4-SMD, No Lead
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 5A (Tc)
- Rds On (Max) @ Id, Vgs 44mOhm @ 5A, 5V
- Vgs(th) (Max) @ Id 2.5V @ 1.2mA
- Supplier Device Package 4-SMD
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Vgs (Max) +6V, -4V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 2.2 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 233 pF @ 50 V
Related Products
650V GAN HEMT, 55MOHM, DFN8X8. W
Inventory: 737
GAN FET HEMT100V30A COTS 4FSMD-B
Inventory: 73
GAN FET HEMT 60V 1A COTS 4UB
Inventory: 82
GAN FET HEMT 100V 90A COTS 5UB
Inventory: 8
GAN FET HEMT 40V 95A COTS 5UB
Inventory: 95
GAN FET HEMT200V18A COTS 4FSMD-B
Inventory: 62
GAN FET HEMT 300V4A COTS 4FSMD-C
Inventory: 0
50V 10A HALF BRIDGE
Inventory: 11
