- Product Model NTH4L060N090SC1
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description SILICON CARBIDE MOSFET, NCHANNEL
- Classification Single FETs, MOSFETs
-
PDF
- 1 12.04
- 30 9.75
- 120 9.18
- 510 8.32
- 1020 7.63
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 46A (Tc)
- Rds On (Max) @ Id, Vgs 43mOhm @ 20A, 18V
- Power Dissipation (Max) 221W (Tc)
- Vgs(th) (Max) @ Id 4.3V @ 5mA
- Supplier Device Package TO-247-4L
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +22V, -8V
- Drain to Source Voltage (Vdss) 900 V
- Gate Charge (Qg) (Max) @ Vgs 87 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 450 V
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