- Product Model WNSC2D04650DJ
- Brand WeEn Semiconductors Co., Ltd
- RoHS Yes
- Description DIODE SIL CARBIDE 650V 4A DPAK
- Classification Single Diodes
-
PDF
- 2500 0.52
- 5000 0.5
- 12500 0.48
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 125pF @ 1V, 1MHz
- Current - Average Rectified (Io) 4A
- Supplier Device Package DPAK
- Operating Temperature - Junction 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A
- Current - Reverse Leakage @ Vr 20 µA @ 650 V
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