Inventory:12030
Pricing:
  • 3000 0.61
  • 6000 0.58
  • 9000 0.55

Technical Details

  • Package / Case 4-VSFN Exposed Pad
  • Mounting Type Surface Mount
  • Speed No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr) 0 ns
  • Technology SiC (Silicon Carbide) Schottky
  • Capacitance @ Vr, F 125pF @ 1V, 1MHz
  • Current - Average Rectified (Io) 4A
  • Supplier Device Package 5-DFN (8x8)
  • Operating Temperature - Junction 175°C
  • Voltage - DC Reverse (Vr) (Max) 650 V
  • Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A
  • Current - Reverse Leakage @ Vr 20 µA @ 650 V

Related Products


DIODE SIL CARBIDE 650V 4A DPAK

Inventory: 5058

DIODE SIL CARBIDE 650V 1A SMB

Inventory: 8685

Top