- Product Model WNSC2D04650TJ
- Brand WeEn Semiconductors Co., Ltd
- RoHS Yes
- Description DIODE SIL CARBIDE 650V 4A 5DFN
- Classification Single Diodes
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Inventory:12030
Pricing:
- 3000 0.61
- 6000 0.58
- 9000 0.55
Technical Details
- Package / Case 4-VSFN Exposed Pad
- Mounting Type Surface Mount
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 125pF @ 1V, 1MHz
- Current - Average Rectified (Io) 4A
- Supplier Device Package 5-DFN (8x8)
- Operating Temperature - Junction 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A
- Current - Reverse Leakage @ Vr 20 µA @ 650 V