- Product Model IPZA65R018CFD7XKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description HIGH POWER_NEW
- Classification Single FETs, MOSFETs
-
PDF
- 1 21.54
- 30 17.86
- 120 16.74
- 510 14.29
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 106A (Tc)
- Rds On (Max) @ Id, Vgs 18mOhm @ 58.2A, 10V
- Power Dissipation (Max) 446W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 2.91mA
- Supplier Device Package PG-TO247-4-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 234 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 11660 pF @ 400 V
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